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CE3512K2 +BOM

Reliable solution for wireless communication systems and satellite equipme

CE3512K2 General Description

RF Mosfet 2 V 10 mA 12GHz 13.7dB 125mW 4-Micro-X

Specifications

Category Discrete Semiconductor ProductsTransistorsFETs, MOSFETsRF FETs, MOSFETs Series -
Technology pHEMT FET Frequency 12GHz
Gain 13.7dB Voltage - Test 2 V
Current Rating (Amps) 15mA Noise Figure 0.5dB
Current - Test 10 mA Power - Output 125mW
Voltage - Rated 4 V Base Product Number CE3512
Product Category: RF JFET Transistors Transistor Type: pHEMT
Technology: GaAs Vds - Drain-Source Breakdown Voltage: 4 V
Id - Continuous Drain Current: 10 mA Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 125 C Pd - Power Dissipation: 125 mW
Mounting Style: SMD/SMT Packaging: Bulk
Forward Transconductance - Min: 54 Product Type: RF JFET Transistors
Factory Pack Quantity: 1 Subcategory: Transistors
Unit Weight: 0.000581 oz

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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.

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Ratings and Reviews

More
M
M**n 02/22/2024

Conventional aluminum tubes

4
A
A**r 07/20/2023

all came fine thanks

3
C
C**e 07/29/2022

Delivered to Canada in about 1 week by e-packet.Not tested yet.

17

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