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CE3512K2-C1 +BOM

125mW - MOSFETs ROHS

  • Manufacturer:

    Cel

  • Mfr.Part #:

    CE3512K2-C1

  • Datasheet:

    CE3512K2-C1 Datasheet (PDF) pdf-icon

  • Transistor Type:

    pHEMT

  • Technology:

    GaAs

  • Operating Frequency:

    12 GHz

  • Gain:

    13.7 dB

CE3512K2-C1 General Description

RF Mosfet 2 V 10 mA 12GHz 13.7dB 125mW 4-Micro-X

ce3512k2-c1

Specifications

Product Category RF JFET Transistors Transistor Type pHEMT
Technology GaAs Operating Frequency 12 GHz
Gain 13.7 dB Vds - Drain-Source Breakdown Voltage 4 V
Vgs - Gate-Source Breakdown Voltage - 3 V Id - Continuous Drain Current 10 mA
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 125 C
Pd - Power Dissipation 125 mW Mounting Style SMD/SMT
Configuration Single Forward Transconductance - Min 54 mS
Gate-Source Cutoff Voltage - 750 mV NF - Noise Figure 0.3 dB
Product Type RF JFET Transistors Factory Pack Quantity 10000
Subcategory Transistors Unit Weight 0.000581 oz

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Great location for the hotel. Great thanks for the services rendered!

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Great trading partner

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S**l 12/28/2021

30 days after Germany. goods OK

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C**e 10/31/2021

it's motor drive nodemcu V2 but detail is V3 V3 can't put socket V2

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In Stock: 6,050

Minimum Order: 1

Qty. Unit Price Ext. Price
1+ $0.531 $0.53
200+ $0.206 $41.20
500+ $0.199 $99.50
1000+ $0.195 $195.00

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