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D2219UK +BOM

RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

Manufacturer:

Tt Electronics
Mfr.Part #:

D2219UK
Datasheet:

D2219UK Datasheet (PDF)
Transistor Polarity:

N-Channel
Technology:

Si
Id - Continuous Drain Current:

2 A
Vds - Drain-Source Breakdown Voltage:

40 V
EDA/CAD Models:

Request Free CAD Models for D2219UK

D2219UK General Description

The product D2219UK is a MOSFET designed for RF applications with a drain-source voltage of 40V and a continuous drain current of 2A. It has a power dissipation of 17.5W and operates in a frequency range of 1MHz to 2GHz. The RF transistor comes in an SOIC package with 8 pins and has a maximum operating temperature of 200°C. This high-performance MOSFET is suitable for a wide range of RF applications requiring reliable and efficient power handling capabilities

Key Features

Simple bias circuits
Low noise
High gain
Low reverse transfer capacitance

Application

Industrial
Communications & Networking
Power Management

Specifications

Product Category	RF MOSFET Transistors	Transistor Polarity	N-Channel
Technology	Si	Id - Continuous Drain Current	2 A
Vds - Drain-Source Breakdown Voltage	40 V	Operating Frequency	1 GHz
Gain	10 dB	Output Power	2.5 W
Maximum Operating Temperature	+ 150 C	Mounting Style	SMD/SMT
Configuration	Single	Height	2.18 mm
Length	5.08 mm	Pd - Power Dissipation	17.5 W
Product Type	RF MOSFET Transistors	Subcategory	MOSFETs
Transistor Type	DMOS FET	Type	RF Power MOSFET
Vgs - Gate-Source Voltage	20 V	Vgs th - Gate-Source Threshold Voltage	1 V to 5 V
Width	4.06 mm