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Small signal transistors
TO-39-3Manufacturer:
Mfr.Part #:
BFX85
Datasheet:
Mounting Style:
Through Hole
Transistor Polarity:
NPN
Configuration:
Single
Collector- Emitter Voltage VCEO Max:
60 V
EDA/CAD Models:
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Efficiency is a key feature of the BFX85, thanks to its low collector-emitter saturation voltage and low base-emitter saturation voltage. This allows for efficient operation in low-power applications and effective switching. The maximum power dissipation of 10W ensures that the transistor can handle moderate power levels without risk of overheating, while the transition frequency of 50MHz indicates its ability to operate at higher frequencies
Product Category | Bipolar Transistors - BJT | Mounting Style | Through Hole |
Transistor Polarity | NPN | Configuration | Single |
Collector- Emitter Voltage VCEO Max | 60 V | Collector- Base Voltage VCBO | 100 V |
Collector-Emitter Saturation Voltage | 1 V | Maximum DC Collector Current | 1 A |
Pd - Power Dissipation | 800 mW | Gain Bandwidth Product fT | 50 MHz |
Minimum Operating Temperature | - 65 C | Maximum Operating Temperature | + 175 C |
Continuous Collector Current | 1 A | DC Collector/Base Gain hfe Min | 15 at 1 A, 10 V |
Height | 6.6 mm | Length | 9.4 mm |
Product Type | BJTs - Bipolar Transistors | Subcategory | Transistors |
Technology | Si | Width | 9.4 mm |
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