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DD600S65K3NOSA1 +BOM

IGBT Modules IHV IHM T XHP 3 3-6 5K

DD600S65K3NOSA1 General Description

Diode Array 2 Independent 6500 V Chassis Mount Module

Infineon Technologies Corporation Inventory

Key Features

  • AlSiC Base Plate for increased Thermal Cycling Capability
  • Extended Storage Temperature down to>
  • Package with CTI > 600
  • Package with enhanced Insulation of 10.2 kV AC 1min
  • High Creepage and Clearance Distance
  • Standardized housing
Infineon Technologies Corporation Original Stock

Application

  • Motor control and drives
  • Traction

Specifications

Category Discrete Semiconductor ProductsDiodesRectifiersDiode Arrays Series -
Diode Configuration 2 Independent Technology Standard
Voltage - DC Reverse (Vr) (Max) 6500 V Current - Average Rectified (Io) (per Diode) -
Voltage - Forward (Vf) (Max) @ If 3.5 V @ 600 A Speed Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr 900 A @ 3600 V Operating Temperature - Junction -50°C ~ 125°C
Mounting Type Chassis Mount Base Product Number DD600S65
RHoS no PBFree no
HalogenFree no

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DD600S65K3NOSA1 Datasheet PDF

Preliminary Specification DD600S65K3NOSA1 PDF Download

DD600S65K3NOSA1 PDF Preview

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