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DD800S33K2C +BOM

IHV130-3 Tray Rectifier Diode capable of handling 3.3KV voltage and 800A current

Manufacturer:

Infineon Technologies Corporation
Mfr.Part #:

DD800S33K2C
Datasheet:

DD800S33K2C Datasheet (PDF)
Configuration:

Dual Parallel
Minimum Operating Temperature:

- 40 C
Maximum Operating Temperature:

+ 125 C
Packaging:

Tray
EDA/CAD Models:

Request Free CAD Models for DD800S33K2C

DD800S33K2C General Description

Elevate your power system with the cutting-edge technology of the DD800S33K2C power module. Its silicon carbide semiconductors deliver unparalleled switching frequencies and energy efficiency, giving you a competitive edge in a fast-paced industry. The module's impressive specifications make it ideal for high-power applications, where performance and reliability are non-negotiable

Infineon Technologies Corporation Inventory

Key Features

High reliability and robust module construction
High power density for compact inverter designs
Standardized housing

Infineon Technologies Corporation Original Stock

Application

Potential Applications

Specifications

Product Category:	IGBT Modules	Configuration:	Dual Parallel
Minimum Operating Temperature:	- 40 C	Maximum Operating Temperature:	+ 125 C
Packaging:	Tray	Height:	29.5 mm
Length:	140 mm	Mounting Style:	Chassis Mount
Product Type:	IGBT Modules	Series:	Diodes IGBT EC2 Module
Factory Pack Quantity:	2	Subcategory:	IGBTs
Width:	130 mm	Part # Aliases:	SP000100612 DD800S33K2CNOSA1