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DSEI12-10A +BOM

The FRED Low Vf series provides enhanced forward voltage characteristics and breakdown voltages reaching 1200V

DSEI12-10A General Description

The DSEI12-10A diode from Ixys Semiconductor is a high-quality component designed for applications requiring a Repetitive Peak Reverse Voltage of 1Kv and an Average Forward Current of 12A. With its single diode configuration and low Forward Voltage of up to 2.7V, this diode offers efficient power conversion and low energy loss. Its fast Reverse Recovery Time of 60ns and high Forward Surge Current of 80A ensure reliable operation under dynamic conditions. Moreover, the DSEI12-10A is RoHS compliant, making it an environmentally friendly choice for electronic designs

Key Features

  • International standard package JEDEC TO-220 AC
  • Planar passivated chips
  • Very short recovery time
  • Extremely low switching losses
  • Low I RM-values
  • Soft recovery behaviour
  • Epoxy meets UL 94V-0

Specifications

Part Life Cycle Code Active Reach Compliance Code not_compliant
ECCN Code EAR99 HTS Code 8541.10.00.80
Additional Feature FREE WHEELING DIODE, HIGH RELIABILITY, LOW NOISE, SNUBBER DIODE Application FAST SOFT RECOVERY
Case Connection CATHODE Configuration SINGLE
Diode Element Material SILICON Diode Type RECTIFIER DIODE
Forward Voltage-Max (VF) 2.1 V JEDEC-95 Code TO-220AC
JESD-30 Code R-PSFM-T2 Non-rep Pk Forward Current-Max 80 A
Number of Elements 1 Number of Phases 1
Number of Terminals 2 Operating Temperature-Max 150 °C
Operating Temperature-Min -40 °C Output Current-Max 12 A
Peak Reflow Temperature (Cel) NOT SPECIFIED Power Dissipation-Max 78 W
Qualification Status Not Qualified Rep Pk Reverse Voltage-Max 1000 V
Reverse Recovery Time-Max 0.06 µs Surface Mount NO
Terminal Form THROUGH-HOLE Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

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