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DSEP60-12A +BOM

12A 1200V TO-247 Silicon Diode"

DSEP60-12A General Description

The DSEP60-12A product is engineered to deliver superior performance and efficiency, making it ideal for demanding environments where precision and reliability are paramount. Its advanced technology and robust construction guarantee long-term stability and consistent operation, even under challenging conditions

Key Features

  • International standard package
  • Planar passivated chips
  • Very short recovery time
  • Extremely low switching losses
  • Low IRM-values
  • Soft recovery behaviour
  • Epoxy meets UL 94V-0

Specifications

Maximum Repetitive Blocking Voltage (V) 1200 Average Continuous Current Rating 60
Case temperature 115 Maximum Surge Current [Diode] (A) 500
maximum virtual junction temperature 175 Thermal resistance [junction-case] (K/W) 0.45
Thermal Resistance caseheatsink KW 0.25 trr typ ns 80
IRM 13 Maximum rate of rise in current over time. 200
Sample Request Yes

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