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DTC113ZUA +BOM

Streamlined design and reduced component count simplify circuit development processes

Key Features

DIGITAL, BUILT IN BIAS RESISTOR RATIO 10

Application

SWITCHING

Specifications

Transistor Type NPN - Pre-Biased + Diode Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V Resistor - Base (R1) 1 kOhms
Resistor - Emitter Base (R2) - DC Current Gain (hFE) (Min) @ Ic, Vce 33 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA Current - Collector Cutoff (Max) 500nA
Frequency - Transition 250 MHz Power - Max 200 mW
Mounting Type Surface Mount

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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.

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