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Silicon N-Type Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) for 24V Applications
ECH-8Manufacturer:
onsemi
Mfr.Part #:
ECH8601M-TL-H
Datasheet:
Technology:
Si
Mounting Style:
SMD/SMT
Transistor Polarity:
N-Channel
Number Of Channels:
2 Channel
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Mosfet Array 24V 8A (Ta) Surface Mount 8-ECH
Product Category | MOSFET | Technology | Si |
Mounting Style | SMD/SMT | Transistor Polarity | N-Channel |
Number of Channels | 2 Channel | Vds - Drain-Source Breakdown Voltage | 24 V |
Id - Continuous Drain Current | 8 A | Rds On - Drain-Source Resistance | 17 mOhms |
Vgs - Gate-Source Voltage | - 12 V, + 12 V | Qg - Gate Charge | 7.5 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 1.6 W | Series | ECH8601M |
Configuration | Dual | Fall Time | 1800 ns |
Product Type | MOSFET | Rise Time | 1000 ns |
Factory Pack Quantity | 3000 | Subcategory | MOSFETs |
Transistor Type | 2 N-Channel | Typical Turn-Off Delay Time | 3000 ns |
Typical Turn-On Delay Time | 300 ns | Unit Weight | 0.000686 oz |
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