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ECH8660-TL-H +BOM

ECH8660 is a Power MOSFET, -30V, -4.5A, 59mΩ, Complementary Dual ECH8 for general purpose switching applications.

  • Manufacturer:

    onsemi

  • Mfr.Part #:

    ECH8660-TL-H

  • Datasheet:

    ECH8660-TL-H Datasheet (PDF) pdf-icon

  • Technology:

    Si

  • Mounting Style:

    SMD/SMT

  • Transistor Polarity:

    N-Channel, P-Channel

  • Number Of Channels:

    2 Channel

ECH8660-TL-H General Description

ECH8660 is a Power MOSFET, -30V, -4.5A, 59mΩ, Complementary Dual ECH8 for general purpose switching applications.

Key Features

  • Compact design for miniaturization
  • Silicon-based for high reliability
  • Fast switching performance ensured
  • Low power consumption realized
  • Voltage regulation stabilized
  • Overcurrent protection designed in

Application

  • Perfect for various tasks
  • Great for everyday use
  • Versatile and reliable

Specifications

Product Category MOSFET Technology Si
Mounting Style SMD/SMT Transistor Polarity N-Channel, P-Channel
Number of Channels 2 Channel Vds - Drain-Source Breakdown Voltage 30 V
Id - Continuous Drain Current 4.5 A Rds On - Drain-Source Resistance 110 mOhms, 82 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 2.6 V
Qg - Gate Charge 4.4 nC, 10 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 1.3 W
Channel Mode Enhancement Series ECH8660
Configuration Dual Fall Time 7.5 ns, 35 ns
Product Type MOSFET Rise Time 11 ns, 26 ns
Factory Pack Quantity 3000 Subcategory MOSFETs
Transistor Type 1 N-Channel, 1 P-Channel Typical Turn-Off Delay Time 17 ns, 45 ns
Typical Turn-On Delay Time 6.2 ns, 7.5 ns Unit Weight 0.000686 oz

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In Stock: 7,072

Minimum Order: 1

Qty. Unit Price Ext. Price
1+ $0.586 $0.59
200+ $0.227 $45.40
500+ $0.219 $109.50
1000+ $0.215 $215.00

The prices below are for reference only.

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