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FGA40N65SMD +BOM
Description of product FGA40N65SMD, Trans IGBT Chip N-CH 650V 80A 349mW 3-Pin(3+Tab) TO-3P Tube
TO-3PN-
Manufacturer:
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Mfr.Part #:
FGA40N65SMD
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Datasheet:
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REACH:
Details
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Technology:
Si
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Mounting Style:
Through Hole
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Configuration:
Single
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EDA/CAD Models:
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Availability: 7809 PCS
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FGA40N65SMD General Description
Designed to meet the demanding requirements of industries such as telecom, energy storage systems, and power factor correction, the FGA40N65SMD is a reliable and high-performance solution for various power electronic applications. Its innovative design offers superior performance compared to traditional IGBTs, making it an ideal choice for modern power systems
Key Features
- Tightened parameter distribution
- High efficiency and reliability guaranteed
- Low power consumption and compact design
- Rapid recovery time for efficient operation
- Robust construction with improved lifespan
- Faultless performance under all conditions
Application
- Microgrids
- UPS Systems
- Data Centers
Specifications
Product Category | IGBT Transistors | REACH | Details |
Technology | Si | Mounting Style | Through Hole |
Configuration | Single | Collector- Emitter Voltage VCEO Max | 650 V |
Collector-Emitter Saturation Voltage | 1.9 V | Maximum Gate Emitter Voltage | - 20 V, 20 V |
Continuous Collector Current at 25 C | 80 A | Pd - Power Dissipation | 349 W |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 175 C |
Series | FGA40N65SMD | Gate-Emitter Leakage Current | 400 nA |
Product Type | IGBT Transistors | Factory Pack Quantity | 30 |
Subcategory | IGBTs | Unit Weight | 0.225789 oz |
Service Policies and Others
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FGA40N65SMD Datasheet PDF
FGA40N65SMD PDF Preview
In Stock: 7,809
Minimum Order: 1
Qty. | Unit Price | Ext. Price |
---|---|---|
1+ | $3.715 | $3.72 |
10+ | $3.320 | $33.20 |
30+ | $2.572 | $77.16 |
90+ | $2.336 | $210.24 |
450+ | $2.226 | $1,001.70 |
900+ | $2.177 | $1,959.30 |
The prices below are for reference only.
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