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See Technical Specifications

FGAF40N60UFTU +BOM

Trans IGBT Chip N-CH 600V 40A 100W 3-Pin(3+Tab) TO-3PF Tube

Manufacturer:

ON Semiconductor, LLC
Mfr.Part #:

FGAF40N60UFTU
Datasheet:

FGAF40N60UFTU Datasheet (PDF)
Voltage - Collector Emitter Breakdown (Max):

600 V
Current - Collector (Ic) (Max):

40 A
Current - Collector Pulsed (Icm):

160 A
Vce(on) (Max) @ Vge, Ic:

3V @ 15V, 20A
EDA/CAD Models:

Request Free CAD Models for FGAF40N60UFTU

FGAF40N60UFTU General Description

The FGAF40N60UFTU power MOSFET transistor is the perfect solution for high power applications, offering a maximum drain-source voltage of 600V and a continuous drain current of 40A. Its low on-resistance ensures minimal power losses and improved efficiency in high current scenarios. Housed in a TO-3P package, this transistor provides superior thermal performance and effective heat dissipation, making it suitable for use in demanding high power applications where thermal management is essential. With a gate-source threshold voltage of 4V and a gate charge of 40nC, the FGAF40N60UFTU allows for fast switching speeds and precise control over its operation, making it an ideal choice for applications requiring high-speed switching such as motor drives, power inverters, and uninterruptible power supplies

Key Features

High speed switching: Eoff =12uJ/A
Low saturation voltage : V_CE(sat) = 2.3 V @ I_C = 20A
High input impedance

Application

Efficient Production - Manufacturing Sector
Seamless Integration - Smart Home Devices
Enhanced Connectivity - Telecommunications

Specifications

Category	Discrete Semiconductor ProductsTransistorsIGBTsSingle IGBTs	Series	-
IGBT Type	-	Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	40 A	Current - Collector Pulsed (Icm)	160 A
Vce(on) (Max) @ Vge, Ic	3V @ 15V, 20A	Power - Max	100 W
Switching Energy	470µJ (on), 130µJ (off)	Input Type	Standard
Gate Charge	77 nC	Td (on/off) @ 25°C	15ns/65ns
Test Condition	300V, 20A, 10Ohm, 15V	Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole	Base Product Number	FGAF40
Product Category	IGBT Transistors	Technology	Si
Mounting Style	Through Hole	Configuration	Single
Collector- Emitter Voltage VCEO Max	600 V	Collector-Emitter Saturation Voltage	3.1 V
Maximum Gate Emitter Voltage	- 20 V, + 20 V	Continuous Collector Current at 25 C	40 A
Pd - Power Dissipation	100 W	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Continuous Collector Current Ic Max	40 A
Gate-Emitter Leakage Current	100 nA	Height	16.7 mm
Length	15.7 mm	Product Type	IGBT Transistors
Factory Pack Quantity	30	Subcategory	IGBTs
Width	5.7 mm	Part # Aliases	FGAF40N60UFTU_NL
Unit Weight	0.245577 oz

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Packing

AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.

Warranty

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Ratings and Reviews

C**b 12/16/2023

The product corresponds to the described, packed well

M**n 09/23/2023

Ordered 16.05.19, took it at the post on 31.05.19. Everything works as stated. With the phone is legal quickly (xiaomi redmi note 4). I recommend the product and the seller. I put 5 stars.

L**s 07/30/2022

That lucia... Ordered in february and received in may .... Oooochen long!!!

E**n 07/09/2022

Tavar profit for a month and a half and the chip on the board is not tp4056 a tc4056a but everything works.