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FLL357ME +BOM

Gallium Arsenide Junction Field-Effect Transistor for L-Band Applicatio

FLL357ME General Description

RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE ME, 2 PIN

Key Features

  • High Output Power: P1dB=35.5dBm (Typ.)
  • High Gain: G1dB-11.5dB (Typ.)
  • High PAE: ηadd=46% (Typ.)
  • Proven Reliability
  • Hermetically Sealed Package

Specifications

Pbfree Code Yes Part Life Cycle Code Transferred
Pin Count 2 ECCN Code EAR99
Additional Feature HIGH RELIABILITY Case Connection SOURCE
Configuration SINGLE DS Breakdown Voltage-Min 15 V
FET Technology JUNCTION Highest Frequency Band L BAND
JESD-30 Code R-CDFM-F2 Number of Elements 1
Number of Terminals 2 Operating Mode DEPLETION MODE
Peak Reflow Temperature (Cel) NOT SPECIFIED Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified Surface Mount YES
Terminal Form FLAT Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED Transistor Application AMPLIFIER
Transistor Element Material GALLIUM ARSENIDE

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