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Gallium Arsenide Junction Field-Effect Transistor for L-Band Applicatio
TO-64Manufacturer:
Sumitomo Electric Device Innovations Inc
Mfr.Part #:
FLL357ME
Datasheet:
Pbfree Code:
Yes
Part Life Cycle Code:
Transferred
Pin Count:
2
ECCN Code:
EAR99
EDA/CAD Models:
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RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE ME, 2 PIN
Pbfree Code | Yes | Part Life Cycle Code | Transferred |
Pin Count | 2 | ECCN Code | EAR99 |
Additional Feature | HIGH RELIABILITY | Case Connection | SOURCE |
Configuration | SINGLE | DS Breakdown Voltage-Min | 15 V |
FET Technology | JUNCTION | Highest Frequency Band | L BAND |
JESD-30 Code | R-CDFM-F2 | Number of Elements | 1 |
Number of Terminals | 2 | Operating Mode | DEPLETION MODE |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | Polarity/Channel Type | N-CHANNEL |
Qualification Status | Not Qualified | Surface Mount | YES |
Terminal Form | FLAT | Terminal Position | DUAL |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | Transistor Application | AMPLIFIER |
Transistor Element Material | GALLIUM ARSENIDE |
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