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FLL57MK +BOM

High-reliability transistor for RF applications

FLL57MK General Description

RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE MK, 3 PIN

Specifications

Part Life Cycle Code Transferred Pin Count 2
ECCN Code EAR99 HTS Code 8541.29.00.75
Additional Feature HIGH RELIABILITY Case Connection SOURCE
Configuration SINGLE DS Breakdown Voltage-Min 15 V
FET Technology JUNCTION Highest Frequency Band L BAND
JESD-30 Code R-CDFM-F2 Number of Elements 1
Number of Terminals 2 Operating Mode DEPLETION MODE
Operating Temperature-Max 175 °C Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 21.4 W Qualification Status Not Qualified
Surface Mount YES Terminal Form FLAT
Terminal Position DUAL Transistor Application AMPLIFIER
Transistor Element Material GALLIUM ARSENIDE

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