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FZ1600R12KF4 +BOM

Insulated Gate Bipolar Transistor designed for high-power applications with 1600A current and 1200V voltage capability

Manufacturer:

Infineon
Mfr.Part #:

FZ1600R12KF4
Datasheet:

FZ1600R12KF4 Datasheet (PDF)
Product:

IGBT Silicon Modules
Configuration:

Dual Common Emitter Common Gate
Collector- Emitter Voltage VCEO Max:

1.2 kV
Collector-Emitter Saturation Voltage:

2.7 V

FZ1600R12KF4 General Description

Furthermore, the built-in temperature sensor is a valuable feature that helps maintain optimal operating conditions by monitoring and controlling the module's temperature effectively. This ensures a safe and reliable performance, giving users peace of mind when it comes to their power needs

Key Features

Advanced cooling system for optimal performance
Superior electromagnetic compatibility
Highly reliable and consistent operation

Application

Solar inverters

Specifications

Product Category	IGBT Modules	Product	IGBT Silicon Modules
Configuration	Dual Common Emitter Common Gate	Collector- Emitter Voltage VCEO Max	1.2 kV
Collector-Emitter Saturation Voltage	2.7 V	Continuous Collector Current at 25 C	1.6 kA
Gate-Emitter Leakage Current	400 nA	Pd - Power Dissipation	10 kW
Minimum Operating Temperature	- 40 C	Maximum Operating Temperature	+ 150 C
Height	38 mm	Length	140 mm
Maximum Gate Emitter Voltage	20 V	Mounting Style	Chassis Mount
Product Type	IGBT Modules	Factory Pack Quantity	1
Subcategory	IGBTs	Technology	Si
Width	130 mm