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H26M31001HPR +BOM

Durable and efficient e-MMC for demanding environments

H26M31001HPR General Description

4GB NAND Flash Memory Single Stack 3.3V e-MMC4.5

Key Features

Compact.

Excellent rise characteristics.

Excellent phase noise characteristics.

Excellent aging characteristics.

Application

Mobile communication base station

Measuring instrument

Synthesizer

Exchanger

High-end router

Specifications

Part Life Cycle Code Obsolete Reach Compliance Code compliant
ECCN Code EAR99 HTS Code 8542.32.00.51
JESD-30 Code R-PBGA-B153 Memory Density 34359738368 bit
Memory IC Type FLASH Memory Width 8
Number of Functions 1 Number of Terminals 153
Number of Words 4294967296 words Number of Words Code 4000000000
Operating Mode SYNCHRONOUS Organization 4GX8
Peak Reflow Temperature (Cel) NOT SPECIFIED Programming Voltage 3.3 V
Surface Mount YES Technology CMOS
Terminal Form BALL Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

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Packing

AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.

Warranty Warranty

We promise to provide 365 days quality assurance service for all our products.

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