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H27U1G8F2CTR-BC +BOM

High-performance NAND Flash memory chip for data storage and processin

H27U1G8F2CTR-BC General Description

SK Hynix has developed the state-of-the-art H27U1G8F2CTR-BC NAND flash memory chip to address the increasing demand for high-capacity storage solutions in today's electronic devices. With its storage capacity of 1Gbit (128MB) and 25nm process technology, this chip is well-suited for use in smartphones, tablets, and embedded systems. Its support for both asynchronous and toggle DDR interface, along with a supply voltage range of 2.7V to 3.6V, ensures compatibility with a variety of devices. The chip also offers impressive read speeds of up to 50MB/s and sequential write speeds of up to 20MB/s, making it a reliable choice for applications requiring fast data transfer. Its page size of 2KB and block size of 128KB provide ample storage space, with 2048 blocks available for data storage. Additionally, the H27U1G8F2CTR-BC features a quick program time of 200µs per page and an erase time of 2ms per block, further enhancing its performance efficiency. Whether used in solid-state drives or other embedded systems, the H27U1G8F2CTR-BC offers superior storage capabilities and reliable performance

Key Features

  • High-speed data transfer ensured
  • Low power consumption guaranteed
  • Fast read and write capabilities
  • Reliable storage for demanding applications
  • Synchronous data transfer supported
  • Robust design for extreme temperatures

Application

  • Embedded systems
  • Automotive
  • Industrial

Specifications

Product Category IC Chips

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