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IKP04N60TXKSA1 +BOM

IGBT Trench Field Stop 600 V 8 A 42 W Through Hole PG-TO220-3-1

IKP04N60TXKSA1 General Description

IGBT Trench Field Stop 600 V 8 A 42 W Through Hole PG-TO220-3-1

Infineon Technologies Corporation Inventory

Key Features

  • Lowest V
  • CEsat
  • Low switching losses
  • Easy parallel switching capability due to positive temperature coefficient in V
  • CEsat
  • Very soft, fast recovery anti-parallel Emitter Controlled Diode
  • High ruggedness, temperature stable behavior
  • Low EMI emissions
  • Low gate charge
  • Very tight parameter distribution
  • Highest efficiency – low conduction and switching losses
  • Comprehensive portfolio in 600 V and 1200 V for flexibility of design
  • High device reliability
Infineon Technologies Corporation Original Stock

Application

  • Uninterruptible Power Supplies (UPS)

Specifications

RHoS yes PBFree yes
HalogenFree yes Product Category IGBT Transistors
Technology Si Maximum Gate Emitter Voltage - 20 V, 20 V
Series TRENCHSTOP IGBT Product Type IGBT Transistors
Subcategory IGBTs Tradename TRENCHSTOP
Part # Aliases IKP04N60T SP000683054

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IKP04N60TXKSA1 Datasheet PDF

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In Stock: 4,610

Minimum Order: 1

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