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See Technical Specifications

IKP15N60T +BOM

220 IGBT transistor, 26 A 600 V

Manufacturer:

Infineon Technologies Corporation
Mfr.Part #:

IKP15N60T
Datasheet:

IKP15N60T Datasheet (PDF)
Feature-channel-type:

N
Feature-configuration:

Single
Feature-maximum-gate-emitter-voltage-v:

±20
Feature-maximum-collector-emitter-voltage-v:

600
EDA/CAD Models:

Request Free CAD Models for IKP15N60T

IKP15N60T General Description

Whether you're designing power electronic circuits or working on high-power systems, the IKP15N60T power MOSFET transistor is a versatile solution that delivers exceptional performance and durability. Trust in Infineon Technologies to provide you with cutting-edge components that meet the demands of today's most challenging applications

Infineon Technologies Corporation Inventory

Key Features

Lowest V
CEsat
Low switching losses
Easy parallel switching capability due to positive temperature coefficient in V
CEsat
Very soft, fast recovery anti-parallel Emitter Controlled Diode
High ruggedness, temperature stable behavior
Low EMI emissions
Low gate charge
Very tight parameter distribution
Highest efficiency – low conduction and switching losses
Comprehensive portfolio in 600 V and 1200 V for flexibility of design
High device reliability

Infineon Technologies Corporation Original Stock

Application

Uninterruptible Power Supplies (UPS)

Specifications

feature-technology		feature-channel-type	N
feature-configuration	Single	feature-maximum-gate-emitter-voltage-v	±20
feature-maximum-collector-emitter-voltage-v	600	feature-maximum-continuous-collector-current-a	26
feature-maximum-power-dissipation-mw	130	feature-packaging	Tube
feature-rad-hard		feature-pin-count	3
feature-cecc-qualified	No	feature-esd-protection
feature-military	No	feature-aec-qualified	No
feature-aec-qualified-number		feature-auto-motive	No
feature-p-pap	No	feature-eccn-code	EAR99
feature-svhc	No	feature-svhc-exceeds-threshold	No