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See Technical Specifications

IKW50N65EH5XKSA1 +BOM

IGBT Trench 650 V 80 A 275 W Through Hole PG-TO247-3

Manufacturer:

Infineon
Mfr.Part #:

IKW50N65EH5XKSA1
Datasheet:

IKW50N65EH5XKSA1 Datasheet (PDF)
Technology:

Si
Mounting Style:

Through Hole
Configuration:

Single
Collector- Emitter Voltage VCEO Max:

650 V
EDA/CAD Models:

Request Free CAD Models for IKW50N65EH5XKSA1

IKW50N65EH5XKSA1 General Description

In summary, the IKW50N65EH5XKSA1 stands out as a high-performance power MOSFET that ticks all the boxes for efficiency, reliability, and ruggedness. Its impressive specifications and features make it a valuable component for a wide range of applications, making it a top choice for engineers and designers looking for a dependable and efficient solution in the realm of power electronics

Key Features

This power transistor is used in high-speed switching applications such as motor drives and inverters
It has a low on-state resistance, which reduces energy losses during switching operations
The device features fast switching characteristics, making it suitable for high-frequency applications

Application

High power MOSFET transistor
Industrial applications

Specifications

Product Category	IGBT Transistors	Technology	Si
Mounting Style	Through Hole	Configuration	Single
Collector- Emitter Voltage VCEO Max	650 V	Collector-Emitter Saturation Voltage	1.65 V
Maximum Gate Emitter Voltage	- 20 V, 20 V	Continuous Collector Current at 25 C	80 A
Pd - Power Dissipation	275 W	Minimum Operating Temperature	- 40 C
Maximum Operating Temperature	+ 175 C	Series	Trenchstop IGBT5
Gate-Emitter Leakage Current	100 nA	Height	20.7 mm
Length	15.87 mm	Product Type	IGBT Transistors
Factory Pack Quantity	240	Subcategory	IGBTs
Tradename	TRENCHSTOP	Width	5.31 mm
Part # Aliases	IKW50N65EH5 SP001257944	Unit Weight	0.213383 oz