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N-Channel 200 V 8A (Tc) 75W (Tc) Through Hole TO-3
TO-3Manufacturer:
Harris Corporation
Mfr.Part #:
IRF232
Datasheet:
Pbfree Code:
No
Part Life Cycle Code:
Active
Case Connection:
DRAIN
Configuration:
SINGLE WITH BUILT-IN DIODE
EDA/CAD Models:
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N-Channel 200 V 8A (Tc) 75W (Tc) Through Hole TO-3
Pbfree Code | No | Part Life Cycle Code | Active |
Reach Compliance Code | Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 200 V |
Drain Current-Max (ID) | 8 A | Drain-source On Resistance-Max | 0.6 Ω |
FET Technology | METAL-OXIDE SEMICONDUCTOR | JEDEC-95 Code | TO-204AA |
JESD-30 Code | O-MBFM-P2 | JESD-609 Code | e0 |
Moisture Sensitivity Level | NOT SPECIFIED | Number of Elements | 1 |
Number of Terminals | 2 | Operating Mode | ENHANCEMENT MODE |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | Polarity/Channel Type | N-CHANNEL |
Pulsed Drain Current-Max (IDM) | 32 A | Qualification Status | COMMERCIAL |
Surface Mount | NO | Terminal Finish | TIN LEAD |
Terminal Form | PIN/PEG | Terminal Position | BOTTOM |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | Transistor Application | SWITCHING |
Transistor Element Material | SILICON |
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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.
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Qty. | Unit Price | Ext. Price |
---|---|---|
1+ | $0.963 | $0.96 |
200+ | $0.373 | $74.60 |
500+ | $0.361 | $180.50 |
1000+ | $0.354 | $354.00 |
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