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N-Channel 150 V 43A (Tc) 200W (Tc) Through Hole TO-220AB
TO-220-3Manufacturer:
Infineon Technologies
Mfr.Part #:
IRF3415PBF
Datasheet:
Series:
HEXFET®
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):
150 V
EDA/CAD Models:
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The IRF3415PBF power MOSFET transistor from Infineon Technologies is a high-performance device designed for a variety of power applications. With a maximum voltage rating of 150 volts and a continuous drain current of 18 amperes, this N-channel transistor is well-suited for demanding power electronics requirements. Its low on-resistance of 0.046 ohms contributes to reduced power losses and increased efficiency, while its gate threshold voltage of 2 to 4 volts and gate-source voltage of ±20 volts ensure compatibility with a wide range of driver circuits. Housed in a TO-220 package with three pins, the IRF3415PBF is easy to mount and install, making it convenient for industrial and automotive applications. Operating temperatures ranging from -55 to 175 degrees Celsius further extend its versatility, allowing it to perform reliably in harsh environments
Series | HEXFET® | FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 150 V |
Current - Continuous Drain (Id) @ 25°C | 43A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 42mOhm @ 22A, 10V | Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 200 nC @ 10 V | Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 2400 pF @ 25 V | Power Dissipation (Max) | 200W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) | Mounting Type | Through Hole |
Base Product Number | IRF3415 |
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Qty. | Unit Price | Ext. Price |
---|---|---|
1+ | $1.257 | $1.26 |
10+ | $1.069 | $10.69 |
50+ | $0.896 | $44.80 |
100+ | $0.781 | $78.10 |
500+ | $0.727 | $363.50 |
1100+ | $0.705 | $775.50 |
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