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IRF7389 +BOM
Product IRF7389 is a Power Field-Effect Transistor with a 7
SO-8-
Manufacturer:
Infineon
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Mfr.Part #:
IRF7389
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Datasheet:
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Tj Max:
150.0 °C
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Moisture Sensitivity Level:
1
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Polarity:
N+P
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Ptot Max:
2.5 W
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EDA/CAD Models:
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Availability: 6529 PCS
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IRF7389 General Description
Engineered for high-speed switching applications, the IRF7389 MOSFET power transistor features a typical gate charge of 100nC and a low gate threshold voltage of 2V, providing compatibility with a wide range of gate drive circuits. Additionally, the transistor's high avalanche energy rating of 410mJ ensures robustness in high-energy transient conditions. Whether it's for power supplies, motor drives, or other high-power switching applications, the IRF7389 delivers the performance and reliability needed for demanding environments
Key Features
- High-efficiency power conversion
- Low-power consumption
- Compact design
- Suitable for automotive applications
Application
- Power supply usage
- Motors and batteries
- Lighting control
Specifications
Tj max | 150.0 °C | Moisture Sensitivity Level | 1 |
Polarity | N+P | Ptot max | 2.5 W |
RthJA max | 50.0 K/W | VDS max | -30.0 V |
VGS max | 20.0 V | RDS (on) max | 98.0 mΩ |
VGS(th) min | 1.0 V | ID max | -5.3 A |
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In Stock: 6,529
Minimum Order: 1
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