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IRF7807VD1 +BOM

3A 30V Surface Mount Transistor

IRF7807VD1 General Description

Due to its high current and voltage ratings, the IRF7807VD1 is ideal for use in power management, switching, and amplification circuits. Its compact size and versatile design make it suitable for a variety of small signal applications where space is limited

Specifications

Series FETKY™ Packaging Tube
Part Status Obsolete FET Type N-Channel
Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 8.3A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V
Rds On (Max) @ Id, Vgs 25mOhm @ 7A, 4.5V Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 14 nC @ 4.5 V Vgs (Max) ±20V
FET Feature Schottky Diode (Isolated) Power Dissipation (Max) 2.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount

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