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IRF8301MTRPBF +BOM

High-power N-MOSFET transistor with unipolar characteristics

Manufacturer:

International Rectifier
Mfr.Part #:

IRF8301MTRPBF
Datasheet:

IRF8301MTRPBF Datasheet (PDF)
Part Life Cycle Code:

Obsolete
Reach Compliance Code:

compliant
ECCN Code:

EAR99
Factory Lead Time:

52 Weeks
EDA/CAD Models:

Request Free CAD Models for IRF8301MTRPBF

IRF8301MTRPBF General Description

Built to deliver exceptional performance and reliability, the IRF8301MTRPBF is a versatile product designed for high speed switching and high current switch applications. With its ultra-low RDS(on), low profile design, and dual sided cooling compatibility, it offers superior efficiency and durability. Its low conduction and switching losses, along with its compatibility with existing surface mount techniques, make it a practical choice for a wide range of applications including battery operated drives, battery protection, eFuses, full-bridge setups, isolated primary and secondary side MOSFETs, load switches, ORing, point of load SyncFETs, and push-pull applications. Whether you're looking for a reliable solution for battery-operated devices or high-speed electronic applications, the IRF8301MTRPBF is designed to meet your needs

Specifications

Source Content uid	IRF8301MTRPBF	Part Life Cycle Code	Obsolete
Reach Compliance Code	compliant	ECCN Code	EAR99
Factory Lead Time	52 Weeks	Additional Feature	ULTRA LOW RESISTANCE
Avalanche Energy Rating (Eas)	260 mJ	Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	30 V
Drain Current-Max (ID)	34 A	Drain-source On Resistance-Max	0.0015 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JESD-30 Code	R-XBCC-N3
Moisture Sensitivity Level	1	Number of Elements	1
Number of Terminals	3	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	150 °C	Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	89 W	Pulsed Drain Current-Max (IDM)	250 A
Surface Mount	YES	Terminal Form	NO LEAD
Terminal Position	BOTTOM	Transistor Application	SWITCHING
Transistor Element Material	SILICON	Series	HEXFET®
FET Type	N-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V	Current - Continuous Drain (Id) @ 25°C	34A (Ta), 192A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V	Rds On (Max) @ Id, Vgs	1.5mOhm @ 32A, 10V
Vgs(th) (Max) @ Id	2.35V @ 150µA	Gate Charge (Qg) (Max) @ Vgs	77 nC @ 4.5 V
Vgs (Max)	±20V	Input Capacitance (Ciss) (Max) @ Vds	6140 pF @ 15 V
Power Dissipation (Max)	2.8W (Ta), 89W (Tc)	Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Base Product Number	IRF8301