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IRF8788TRPBF +BOM

SOIC-8 MOSFET - Single N-Channel HEXFET, 30V, 2.8mOhm, 66nC charge

Manufacturer:

INFINEON
Mfr.Part #:

IRF8788TRPBF
Datasheet:

IRF8788TRPBF Datasheet (PDF)
Part Life Cycle Code:

Active
Reach Compliance Code:

compliant
ECCN Code:

EAR99
Factory Lead Time:

65 Weeks
EDA/CAD Models:

Request Free CAD Models for IRF8788TRPBF

IRF8788TRPBF General Description

The IRF8788TRPBF Power MOSFET is engineered to deliver exceptional performance in a variety of applications, thanks to its N-channel design and low on-resistance of 0.28 ohms. With a maximum drain-source voltage rating of 30 volts and a continuous drain current of 9.2 amperes, this transistor is well-suited for medium power requirements. Its compact DPAK (TO-252) package ensures easy installation on printed circuit boards, making it a convenient choice for designers and engineers

Specifications

Source Content uid	IRF8788TRPBF	Part Life Cycle Code	Active
Reach Compliance Code	compliant	ECCN Code	EAR99
Factory Lead Time	65 Weeks	Configuration	SINGLE
FET Technology	METAL-OXIDE SEMICONDUCTOR	Moisture Sensitivity Level	1
Number of Elements	1	Operating Mode	ENHANCEMENT MODE
Polarity/Channel Type	N-CHANNEL	Surface Mount	YES