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See Technical Specifications

IRF9388PBF +BOM

P-Channel MOSFET with a voltage rating of 30 volts, capable of handling up to 12 amps of current with a surface-mountable package

Manufacturer:

Infineon Technologies
Mfr.Part #:

IRF9388PBF
Datasheet:

IRF9388PBF Datasheet (PDF)
Series:

HEXFET®
Packaging:

Tube
FET Type:

P-Channel
Technology:

MOSFET (Metal Oxide)
EDA/CAD Models:

Request Free CAD Models for IRF9388PBF

Avaq Semiconductor offers the highly versatile and reliable IRF9388PBF driver, produced by Infineon Technologies. With its multifunctional and high-performance capabilities, this component is an excellent choice for a wide range of electronic projects.

To ensure that you have all the necessary information to make the most of this component, Avaq provides a free datasheet PDF, as well as circuit diagrams, pin layouts, pin details, pin voltage ratings, and equivalent components for the IRF9388PBF.

Avaq also offers free samples. Simply fill out and submit the sample request form to receive your free samples for testing. If you have any questions, please feel free to contact us at any time.

Specifications

Series	HEXFET®	Packaging	Tube
Part Status	Discontinued	FET Type	P-Channel
Technology	MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	12A (Ta)	Drive Voltage (Max Rds On, Min Rds On)	10V, 20V
Rds On (Max) @ Id, Vgs	8.5mOhm @ 12A, 20V	Vgs(th) (Max) @ Id	2.4V @ 25µA
Gate Charge (Qg) (Max) @ Vgs	52 nC @ 10 V	Vgs (Max)	±25V
Input Capacitance (Ciss) (Max) @ Vds	1680 pF @ 25 V	Power Dissipation (Max)	2.5W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount