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See Technical Specifications

IRF9511 +BOM

3A Silicon P-Channel Power MOSFET, 80V, 1.2Ω, TO-220AB

Manufacturer:

Harris Corporation
Mfr.Part #:

IRF9511
Datasheet:

IRF9511 Datasheet (PDF)
Drain Source Voltage (Vdss):

80V
Continuous Drain Current (Id):

3A
Drain Source On Resistance (RDS(on)@Vgs,Id):

1.2Ω@1.5A,10V
Power Dissipation (Pd):

20W
EDA/CAD Models:

Request Free CAD Models for IRF9511

IRF9511 General Description

One of the standout features of the IRF9511 is its fast switching speed and low gate charge, making it an excellent choice for high frequency switching tasks. Additionally, its low input and output capacitance contribute to reducing switching losses and enhancing overall efficiency, making it a reliable and effective component for demanding applications

Key Features

Piezoelectric ceramic sensors
Silicon-on-insulator (SOI) substrate
Low inductance design for high-frequency applications

Application

Compact DC-DC converter
Fast battery charger
Advanced automotive system

Specifications

Drain Source Voltage (Vdss)	80V	Continuous Drain Current (Id)	3A
Drain Source On Resistance (RDS(on)@Vgs,Id)	1.2Ω@1.5A,10V	Power Dissipation (Pd)	20W
Gate Threshold Voltage (Vgs(th)@Id)	4V@250uA	Type	P Channel
Input Capacitance (Ciss@Vds)	180pF@25V	Total Gate Charge (Qg@Vgs)	11nC@10V
Operating Temperature	-55℃~+150℃@(Tj)