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See Technical Specifications

IRFB4321PBF +BOM

The IRFB4321PBF is a high-power N-channel MOSFET designed to handle up to 150 volts and 83 amperes, presented in a TO-220AB package

Manufacturer:

INFINEON
Mfr.Part #:

IRFB4321PBF
Datasheet:

IRFB4321PBF Datasheet (PDF)
Part Life Cycle Code:

Active
Reach Compliance Code:

compliant
ECCN Code:

EAR99
Factory Lead Time:

65 Weeks
EDA/CAD Models:

Request Free CAD Models for IRFB4321PBF

IRFB4321PBF General Description

The IRFB4321PBF Power Field-Effect Transistor is a high-quality, high-performance component designed for demanding power applications. With a 75A maximum current rating and 150V voltage rating, this N-Channel MOSFET offers reliable and efficient power handling. The low on-resistance of 0.015ohm ensures minimal power loss and optimal energy efficiency. Housed in a TO-220AB package with lead-free, plastic construction, the IRFB4321PBF provides excellent thermal performance and complies with environmental standards. Whether used in motor controls, solar inverters, or welding equipment, this transistor delivers exceptional performance and rugged reliability

Key Features

Low power loss during operation
Rapid thermal recovery time
Silicon-controlled rectifier function

Application

Industrial power systems
Electronic motor drives
Smart grid solutions
Renewable energy applications
High efficiency converters
Power management circuits

Specifications

Source Content uid	IRFB4321PBF	Part Life Cycle Code	Active
Reach Compliance Code	compliant	ECCN Code	EAR99
Factory Lead Time	65 Weeks	Avalanche Energy Rating (Eas)	120 mJ
Case Connection	DRAIN	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	150 V	Drain Current-Max (ID)	75 A
Drain-source On Resistance-Max	0.015 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code	TO-220AB	JESD-30 Code	R-PSFM-T3
JESD-609 Code	e3	Number of Elements	1
Number of Terminals	3	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	175 °C	Peak Reflow Temperature (Cel)	250
Polarity/Channel Type	N-CHANNEL	Power Dissipation-Max (Abs)	330 W
Pulsed Drain Current-Max (IDM)	330 A	Qualification Status	Not Qualified
Surface Mount	NO	Terminal Finish	MATTE TIN OVER NICKEL
Terminal Form	THROUGH-HOLE	Terminal Position	SINGLE
Time@Peak Reflow Temperature-Max (s)	30	Transistor Application	SWITCHING
Transistor Element Material	SILICON