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See Technical Specifications

IRFB7534PBF +BOM

Type: N-channel MOSFET in a TO-220AB package, compliant with ROHS regulations

Manufacturer:

INFINEON
Mfr.Part #:

IRFB7534PBF
Datasheet:

IRFB7534PBF Datasheet (PDF)
Part Life Cycle Code:

Active
Reach Compliance Code:

compliant
ECCN Code:

EAR99
Factory Lead Time:

52 Weeks
EDA/CAD Models:

Request Free CAD Models for IRFB7534PBF

IRFB7534PBF General Description

The IRFB7534PBF N-channel MOSFET is a high-performance semiconductor device that is capable of handling large amounts of power with ease. With a continuous drain current of 195A and a drain-source voltage of 60V, this MOSFET is well-suited for high-power applications. The low on-resistance of 0.002ohm at a test voltage of 10V ensures minimal power loss and high efficiency, making it an ideal choice for power management and switching applications. Additionally, the threshold voltage of 3.7V provides precise control over the MOSFET's switching behavior, ensuring reliable and consistent performance

Key Features

Dynamic dV/dt Rating
Repetitive Avalanche Rated
Fast Switching
Ease of Paralleling
Simple Drive Requirements
Compliant to RoHS Directive 2002/95/EC

Application

SWITCHING

Specifications

Source Content uid	IRFB7534PBF	Part Life Cycle Code	Active
Reach Compliance Code	compliant	ECCN Code	EAR99
Factory Lead Time	52 Weeks	Avalanche Energy Rating (Eas)	775 mJ
Case Connection	ISOLATED	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	60 V	Drain Current-Max (ID)	195 A
Drain-source On Resistance-Max	0.0024 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code	TO-220AB	JESD-30 Code	R-PSFM-T3
Number of Elements	1	Number of Terminals	3
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	175 °C
Operating Temperature-Min	-55 °C	Peak Reflow Temperature (Cel)	NOT SPECIFIED
Polarity/Channel Type	N-CHANNEL	Power Dissipation-Max (Abs)	294 W
Pulsed Drain Current-Max (IDM)	944 A	Surface Mount	NO
Terminal Form	THROUGH-HOLE	Terminal Position	SINGLE
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED	Transistor Application	SWITCHING
Transistor Element Material	SILICON