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IRFF310 +BOM

IRFF310: Hermetically Packaged 400V Single N-Channel Hi-Rel MOSFET Encased in TO-205AF

Key Features

  • Repetitive Avalanche Ratings
  • Dynamic dv/dt Rating
  • Hermetically Sealed
  • Simple Drive Requirements
  • Ease of Paralleling
  • ESD Rating: Class 1A per MIL-STD-750, Method 1020

Specifications

Source Content uid IRFF310 Part Life Cycle Code Active
Reach Compliance Code Configuration SINGLE
DS Breakdown Voltage-Min 400 V Drain Current-Max (ID) 1.25 A
FET Technology METAL-OXIDE SEMICONDUCTOR Number of Elements 1
Operating Mode ENHANCEMENT MODE Polarity/Channel Type N-CHANNEL
Transistor Element Material SILICON

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