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IRFH5106TR2PBF +BOM

An 8-pin PQFN EP packaged N-channel MOSFET with a 60V voltage rating and 21A current capability, supplied in tape and reel format

Manufacturer:

Infineon Technologies Ag
Mfr.Part #:

IRFH5106TR2PBF
Datasheet:

IRFH5106TR2PBF Datasheet (PDF)
ECCN (US):

EAR99
Automotive:

No
PPAP:

No
Configuration:

Single Quad Drain Triple Source
EDA/CAD Models:

Request Free CAD Models for IRFH5106TR2PBF

IRFH5106TR2PBF General Description

The transistor's low gate charge and gate-source threshold voltage make it easy to drive and control in switching circuits, optimizing overall system performance. With a compact and space-saving package, the IRFH5106TR2PBF is a valuable asset for modern electronic designs that prioritize efficiency and reliability

Key Features

IRF540N is a high-power MOSFET suitable for DC-DC converters
It features a low on-state resistance of 8.3 mΩ and 100 V voltage rating
This MOSFET has a high current rating of 33 A

Application

Energy-efficient design
Robust power handling
Sophisticated power transistor

Specifications

ECCN (US)	EAR99	Part Status	Obsolete
Automotive	No	PPAP	No
Category	Power MOSFET	Configuration	Single Quad Drain Triple Source
Process Technology	HEXFET	Channel Mode	Enhancement
Channel Type	N	Number of Elements per Chip	1
Maximum Drain Source Voltage (V)	60	Maximum Gate Source Voltage (V)	±20
Maximum Continuous Drain Current (A)	21	Maximum Drain Source Resistance (mOhm)	5.6@10V
Typical Gate Charge @ Vgs (nC)	50@10V	Typical Gate Charge @ 10V (nC)	50
Typical Input Capacitance @ Vds (pF)	3090@25V	Maximum Power Dissipation (mW)	3600
Typical Fall Time (ns)	9.5	Typical Rise Time (ns)	13
Typical Turn-Off Delay Time (ns)	23	Typical Turn-On Delay Time (ns)	8.1
Minimum Operating Temperature (°C)	-55	Maximum Operating Temperature (°C)	150
Packaging	Tape and Reel	Mounting	Surface Mount
PCB changed	8	Pin Count	8