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IRFR020 +BOM

Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3

IRFR020 General Description

N-Channel 60 V 14A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount DPAK

Key Features

  • Dynamic dV/dt rating
  • Surface-mount (IRFR020, SiHFR020)
  • Available in tape and reel
  • Fast switching
  • Ease of paralleling
  • Simple drive requirements
  • Specifications

    Part Life Cycle Code Obsolete Pin Count 3
    Reach Compliance Code compliant ECCN Code EAR99
    Additional Feature FAST SWITCHING Avalanche Energy Rating (Eas) 91 mJ
    Case Connection DRAIN Configuration SINGLE WITH BUILT-IN DIODE
    DS Breakdown Voltage-Min 60 V Drain Current-Max (ID) 14 A
    Drain-source On Resistance-Max 0.1 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
    JEDEC-95 Code TO-252 JESD-30 Code R-PSSO-G2
    JESD-609 Code e0 Number of Elements 1
    Number of Terminals 2 Operating Mode ENHANCEMENT MODE
    Operating Temperature-Max 150 °C Polarity/Channel Type N-CHANNEL
    Pulsed Drain Current-Max (IDM) 56 A Qualification Status Not Qualified
    Surface Mount YES Terminal Finish TIN LEAD
    Terminal Form GULL WING Terminal Position SINGLE
    Transistor Application SWITCHING Transistor Element Material SILICON

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