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IRFS3004TRL7PP +BOM

High Power 7-Pin N-Channel Silicon Transistor

Manufacturer:

INFINEON
Mfr.Part #:

IRFS3004TRL7PP
Datasheet:

IRFS3004TRL7PP Datasheet (PDF)
Part Life Cycle Code:

Active
Reach Compliance Code:

compliant
ECCN Code:

EAR99
Factory Lead Time:

53 Weeks, 1 Day
EDA/CAD Models:

Request Free CAD Models for IRFS3004TRL7PP

IRFS3004TRL7PP General Description

With a N Channel polarity, the IRFS3004TRL7PP transistor has a continuous drain current of 7.4mA and a maximum drain source voltage of 100V. It exhibits an on resistance of 18mohm at a test voltage of 10V and a typical threshold voltage of 3.7V. Furthermore, it has a power dissipation of 380W, making it suitable for high power applications. Additionally, the transistor is RoHS compliant, ensuring it meets environmental standards

Key Features

Silicon carbide MOSFET for improved efficiency
High-performance and reliability ensured
Fast switching times for low EMI
Limited inductance for reduced ringing
Low on-resistance for minimized heat generation
Rugged design for high-reliability operation

Application

Consumer electronics
Audio equipment
Security systems

Specifications

Source Content uid	IRFS3004TRL7PP	Part Life Cycle Code	Active
Reach Compliance Code	compliant	ECCN Code	EAR99
Factory Lead Time	53 Weeks, 1 Day	Avalanche Energy Rating (Eas)	290 mJ
Case Connection	DRAIN	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	40 V	Drain Current-Max (ID)	240 A
Drain-source On Resistance-Max	0.00125 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code	TO-263CB	JESD-30 Code	R-PSSO-G6
JESD-609 Code	e3	Moisture Sensitivity Level	1
Number of Elements	1	Number of Terminals	6
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	175 °C
Operating Temperature-Min	-55 °C	Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	N-CHANNEL	Power Dissipation-Max (Abs)	380 W
Pulsed Drain Current-Max (IDM)	1610 A	Surface Mount	YES
Terminal Finish	MATTE TIN OVER NICKEL	Terminal Form	GULL WING
Terminal Position	SINGLE	Time@Peak Reflow Temperature-Max (s)	30
Transistor Application	SWITCHING	Transistor Element Material	SILICON