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See Technical Specifications

IRFS31N20DPBF +BOM

5.5V gate-source threshold voltage at 250uA current for efficient low power operation

Manufacturer:

International Rectifier
Mfr.Part #:

IRFS31N20DPBF
Datasheet:

IRFS31N20DPBF Datasheet (PDF)
Part Life Cycle Code:

Obsolete
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99
Avalanche Energy Rating (Eas):

420 mJ
EDA/CAD Models:

Request Free CAD Models for IRFS31N20DPBF

IRFS31N20DPBF General Description

The IRFS31N20DPBF power MOSFET, part of the HEXFET series, is tailored for high-power switching applications with a robust 200V drain-source voltage rating and a continuous 31A drain current. Boasting a low on-resistance of 40mΩ, it minimizes power losses and elevates efficiency in switching applications. Its TO-263 housing ensures superior thermal performance and easy mounting, complemented by a high dv/dt rating suitable for high-speed switching applications. With a low gate charge and fast switching speeds, the MOSFET enables efficient operation in high-frequency applications and can withstand high operating temperatures and harsh environments, ensuring dependable performance in demanding applications

Specifications

Source Content uid	IRFS31N20DPBF	Part Life Cycle Code	Obsolete
Reach Compliance Code	not_compliant	ECCN Code	EAR99
Avalanche Energy Rating (Eas)	420 mJ	Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	200 V
Drain Current-Max (ID)	31 A	Drain-source On Resistance-Max	0.082 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JESD-30 Code	R-PSSO-G2
JESD-609 Code	e3	Moisture Sensitivity Level	1
Number of Elements	1	Number of Terminals	2
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	175 °C
Operating Temperature-Min	-55 °C	Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	N-CHANNEL	Power Dissipation-Max (Abs)	200 W
Pulsed Drain Current-Max (IDM)	124 A	Qualification Status	Not Qualified
Surface Mount	YES	Terminal Finish	MATTE TIN OVER NICKEL
Terminal Form	GULL WING	Terminal Position	SINGLE
Time@Peak Reflow Temperature-Max (s)	30	Transistor Application	SWITCHING
Transistor Element Material	SILICON