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Trans MOSFET P-CH 100V 15.8A 3-Pin(3+Tab) TO-257AA
TO-257-3Manufacturer:
Mfr.Part #:
IRFY9140
Datasheet:
Pbfree Code:
No
Part Life Cycle Code:
Transferred
Pin Count:
3
ECCN Code:
EAR99
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Discover the versatility and reliability of the IRFY9140 power field-effect transistor, engineered for high-power applications that demand precision and efficiency. With a maximum drain current of 15.8A and a voltage rating of 100V, this P-channel silicon MOSFET delivers exceptional performance with a low on-resistance of 0.2ohm. Housed in a TO-257AA hermetic sealed package, the IRFY9140 offers robust protection against moisture and contaminants, making it an ideal choice for rugged industrial environments. Trust the IRFY9140 to provide consistent and reliable power management for your critical electrical systems
Pbfree Code | No | Part Life Cycle Code | Transferred |
Pin Count | 3 | Reach Compliance Code | |
ECCN Code | EAR99 | Additional Feature | HIGH RELIABILITY |
Avalanche Energy Rating (Eas) | 640 mJ | Case Connection | ISOLATED |
Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 100 V |
Drain Current-Max (ID) | 15.8 A | Drain-source On Resistance-Max | 0.2 Ω |
FET Technology | METAL-OXIDE SEMICONDUCTOR | JEDEC-95 Code | TO-257AA |
JESD-30 Code | S-XSFM-P3 | Number of Elements | 1 |
Number of Terminals | 3 | Operating Mode | ENHANCEMENT MODE |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | Polarity/Channel Type | P-CHANNEL |
Pulsed Drain Current-Max (IDM) | 60 A | Qualification Status | Not Qualified |
Surface Mount | NO | Terminal Form | PIN/PEG |
Terminal Position | SINGLE | Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Transistor Application | SWITCHING | Transistor Element Material | SILICON |
Product Category | MOSFET | Technology | Si |
Mounting Style | Through Hole | Transistor Polarity | P-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 100 V |
Id - Continuous Drain Current | 15.8 A | Rds On - Drain-Source Resistance | 200 mOhms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 100 W |
Channel Mode | Enhancement | Fall Time | 65 ns |
Height | 16.89 mm | Length | 10.66 mm |
Product Type | MOSFET | Rise Time | 85 ns |
Subcategory | MOSFETs | Transistor Type | 1 P-Channel |
Typical Turn-Off Delay Time | 85 ns | Typical Turn-On Delay Time | 35 ns |
Width | 5.08 mm | Unit Weight | 0.011993 oz |
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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.
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