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See Technical Specifications

IRG4PC30KD +BOM

IGBT IRG4PC30KD 28A TO247

Manufacturer:

Infineon Technologies Ag
Mfr.Part #:

IRG4PC30KD
Datasheet:

IRG4PC30KD Datasheet (PDF)
ECCN (US):

EAR99
Automotive:

No
PPAP:

No
Channel Type:

N
EDA/CAD Models:

Request Free CAD Models for IRG4PC30KD

IRG4PC30KD General Description

The IRG4PC30KD is a top-notch Insulated Gate Bipolar Transistor (IGBT) semiconductor device that stands out in the realm of high power switching applications. Boasting a robust voltage rating of 600V and a current rating of 23A, this component is the go-to choice for a diverse array of industrial and commercial uses. Its rapid switching speed and minimal on-state voltage drop work in tandem to reduce power dissipation and enhance overall efficiency within high power circuits. Moreover, the presence of a built-in diode ensures that reverse polarity incidents are met with unmatched protection, bolstering the device's reliability and longevity

Key Features

Excellent thermal stability
Fast rise and fall times
High current and voltage ratings
Low input capacitance
High frequency and ruggedness
Ultra low leakage current

Application

For high power systems
Efficient energy usage
Reliable motor control

Specifications

ECCN (US)	EAR99	Part Status	Obsolete
Automotive	No	PPAP	No
Channel Type	N	Configuration	Single
Maximum Gate Emitter Voltage (V)	±20	Maximum Collector-Emitter Voltage (V)	600
Typical Collector Emitter Saturation Voltage (V)	2.88	Maximum Continuous Collector Current (A)	28
Maximum Gate Emitter Leakage Current (uA)	0.1	Maximum Power Dissipation (mW)	100
Minimum Operating Temperature (°C)	-55	Maximum Operating Temperature (°C)	150
Packaging	Tube	Mounting	Through Hole
PCB changed	3	Tab	Tab
Pin Count	3	Lead Shape	Through Hole