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N-MOSFET transistor with a unipolar configuration, rated at 100V and 7.8A, with a power dissipation of 5.8W in a PQFN2X2 package
6-PowerVDFNManufacturer:
Infineon Technologies
Mfr.Part #:
IRL100HS121
Datasheet:
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
11A (Tc)
EDA/CAD Models:
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Infineon's commitment to innovation and excellence is evident in the design and functionality of the IRL100HS121 logic level power MOSFETs. By combining advanced features with a versatile package, these MOSFETs are poised to set new standards in efficiency, performance, and reliability for wireless charging, telecom, and adapter applications. Get ahead of the competition and invest in the future of semiconductor technology with the IRL100HS121
FET Type | N-Channel | Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100 V | Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | Rds On (Max) @ Id, Vgs | 42mOhm @ 6.7A, 10V |
Vgs(th) (Max) @ Id | 2.3V @ 10µA | Gate Charge (Qg) (Max) @ Vgs | 5.6 nC @ 4.5 V |
Vgs (Max) | ±20V | Input Capacitance (Ciss) (Max) @ Vds | 440 pF @ 50 V |
Power Dissipation (Max) | 11.5W (Tc) | Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount | Base Product Number | IRL100 |
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