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IRL2203NPBF +BOM

N-Channel Power MOSFET, rated at 116 Amperes, with a Drain-to-Source Voltage of 30 Volts and a nominal On-Resistance of 0

Manufacturer:

International Rectifier
Mfr.Part #:

IRL2203NPBF
Datasheet:

IRL2203NPBF Datasheet (PDF)
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

30 V
Current - Continuous Drain (Id) @ 25°C:

116A (Tc)
EDA/CAD Models:

Request Free CAD Models for IRL2203NPBF

IRL2203NPBF General Description

The IRL2203NPBF MOSFET is a versatile and robust component that meets the demands of modern electronics design. Its low on-resistance, high current rating, and efficient thermal management make it a reliable choice for switching and amplification tasks. Whether used in high-power or low-power circuits, this MOSFET delivers consistent performance and longevity. The TO-220AB package allows for easy installation and ensures proper heat dissipation to maximize the transistor's lifespan

Key Features

AVALANCHE RATED, HIGH RELIABILITY

Application

SWITCHING

Specifications

FET Type	N-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V	Current - Continuous Drain (Id) @ 25°C	116A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V	Rds On (Max) @ Id, Vgs	7mOhm @ 60A, 10V
Vgs(th) (Max) @ Id	1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs	60 nC @ 4.5 V
Vgs (Max)	±16V	Input Capacitance (Ciss) (Max) @ Vds	3290 pF @ 25 V
FET Feature	-	Power Dissipation (Max)	180W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)	Mounting Type	Through Hole