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See Technical Specifications

IRL3502 +BOM

Transistor MOSFET, N-Type, 20V, 110A, TO-220AB Encapsulation"

Manufacturer:

Infineon Technologies
Mfr.Part #:

IRL3502
Datasheet:

IRL3502 Datasheet (PDF)
Series:

HEXFET®
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

20 V
EDA/CAD Models:

Request Free CAD Models for IRL3502

IRL3502 General Description

In conclusion, the Infineon Technologies IRL3502 stands out as a robust and efficient MOSFET transistor that combines high performance with practical design features. Its versatility and reliability make it a valuable component for demanding electronic applications, where power efficiency and operational stability are paramount

Specifications

Series	HEXFET®	FET Type	N-Channel
Technology	MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	110A (Tc)	Drive Voltage (Max Rds On, Min Rds On)	4.5V, 7V
Rds On (Max) @ Id, Vgs	7mOhm @ 64A, 7V	Vgs(th) (Max) @ Id	700mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs	110 nC @ 4.5 V	Vgs (Max)	±10V
Input Capacitance (Ciss) (Max) @ Vds	4700 pF @ 15 V	Power Dissipation (Max)	140W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Through Hole