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IRL3502PBF +BOM

High-performance power MOSFET with N-channel design, 20V voltage rating, and 8mOhms resistance

Manufacturer:

Infineon Technologies
Mfr.Part #:

IRL3502PBF
Datasheet:

IRL3502PBF Datasheet (PDF)
Series:

HEXFET®
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

20 V
EDA/CAD Models:

Request Free CAD Models for IRL3502PBF

IRL3502PBF General Description

Invest in the IRL3502PBF power MOSFET for high current applications, where efficient power handling is crucial. This component features a voltage rating of 20V and a continuous drain current of 100A, making it suitable for demanding tasks. Its low on-resistance (RDS(on)) of 4.6mΩ at a VGS of 10V ensures minimal power loss, making it ideal for motor control, power supplies, and DC-DC converters. Housed in a TO-220AB package, it can be easily mounted on a heatsink to dissipate heat, while its maximum junction temperature of 175°C guarantees reliability under high power conditions. In industrial and automotive environments, the IRL3502PBF stands out for its enhanced power handling capability and low on-resistance, delivering high performance where it matters most

Specifications

Series	HEXFET®	FET Type	N-Channel
Technology	MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	110A (Tc)	Drive Voltage (Max Rds On, Min Rds On)	4.5V, 7V
Rds On (Max) @ Id, Vgs	7mOhm @ 64A, 7V	Vgs(th) (Max) @ Id	700mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs	110 nC @ 4.5 V	Vgs (Max)	±10V
Input Capacitance (Ciss) (Max) @ Vds	4700 pF @ 15 V	Power Dissipation (Max)	140W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Through Hole