This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

IRL3803S +BOM

Premium MOSFET solution for high-power electronics design

Manufacturer:

Infineon Technologies
Mfr.Part #:

IRL3803S
Datasheet:

IRL3803S Datasheet (PDF)
Series:

HEXFET®
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

30 V
EDA/CAD Models:

Request Free CAD Models for IRL3803S

IRL3803S General Description

The IRL3803S is a top-notch power MOSFET that excels in a variety of electronic applications. With its impressive N-channel design, it boasts a 30V drain-source voltage (VDS) and a continuous drain current (ID) of 140A, making it ideal for high-power applications such as power supplies, motor control, and DC-DC converters. Featuring a low on-resistance (RDS(on)) of 3.8mΩ at a VGS of 10V, this MOSFET minimizes power losses and ensures high efficiency in switching operations. Its low gate charge of 61nC and fast switching speed further enhance its performance, enabling quick and effective operation. Housed in a TO-263 package, the IRL3803S offers excellent thermal resistance and easy mounting on a PCB, while its ability to withstand high temperatures ensures long-term reliability and consistent performance

Specifications

Series	HEXFET®	FET Type	N-Channel
Technology	MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	140A (Tc)	Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	6mOhm @ 71A, 10V	Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	140 nC @ 4.5 V	Vgs (Max)	±16V
Input Capacitance (Ciss) (Max) @ Vds	5000 pF @ 25 V	Power Dissipation (Max)	3.8W (Ta), 200W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)	Mounting Type	Surface Mount