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IRL520NS +BOM

Compact and robust metal-oxide semiconductor FET for automotive us

IRL520NS General Description

N-Channel 100 V 10A (Tc) 3.8W (Ta), 48W (Tc) Surface Mount D2PAK

Key Features

  • Dynamic dV/dt Rating
  • Repetitive Avalanche Rated
  • Logic-Level Gate Drive
  • RDS(on) Specified at VGS = 4 V and 5 V
  • 175 °C Operating Temperature
  • Fast Switching
  • Ease of Paralleling
  • Lead (Pb)-free Availble

Specifications

Series HEXFET® FET Type N-Channel
Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 10A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Rds On (Max) @ Id, Vgs 180mOhm @ 6A, 10V Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 5 V Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 440 pF @ 25 V Power Dissipation (Max) 3.8W (Ta), 48W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount

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