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Silicon-based transistor with extremely low input capacitance of 0.12ohm, ideal for RF power amplifiers and switch-mode power supplies
TO220Manufacturer:
Infineon
Mfr.Part #:
IRL530NPBF
Datasheet:
FunctionalPacking:
TUBE
AddProductInfo:
Planar Mosfet - TO-220
Msl:
NA
HalogenFree:
yes
EDA/CAD Models:
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The IRL530NPBF is a N Channel MOSFET designed for logic level applications, featuring a continuous drain current of 15A and a drain source voltage of 100V. With a low on resistance of 100mohm and a maximum threshold voltage of 2V, this transistor is suitable for high power electronic applications. The TO-220AB package style with 3 pins and 2.54mm lead spacing makes it easy to integrate into various circuit designs. With a power dissipation of 63W and a pulse current rating of 60A, this transistor can handle high power loads while maintaining stability and reliability. The through hole termination type ensures secure and reliable connections in the circuit. With a maximum voltage rating of 100V for both drain source and gate source, the IRL530NPBF provides a wide operating range for different applications
functionalPacking | TUBE | addProductInfo | Planar Mosfet - TO-220 |
msl | NA | halogenFree | yes |
customerInfo | STANDARD | fgr | FLQ |
productClassification | COM | productStatusInfo | discontinued |
hfgr | P | pbFree | yes |
moistureProtPack | NON DRY | orderingCode | SP001578734 |
opn | IRL530NPBF | docuNoCancellation | PD_091_22B |
completelyPbFree | no | sapMatnrSali | SP001578734 |
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