This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

IRL530NSTRLPBF +BOM

N-Channel 100 V 17A (Tc) 3.8W (Ta), 79W (Tc) Surface Mount D2PAK

Manufacturer:

Infineon Technologies
Mfr.Part #:

IRL530NSTRLPBF
Datasheet:

IRL530NSTRLPBF Datasheet (PDF)
Series:

HEXFET®
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

100 V
EDA/CAD Models:

Request Free CAD Models for IRL530NSTRLPBF

IRL530NSTRLPBF General Description

With its impressive specifications and robust design, the IRL530NSTRLPBF N-channel power MOSFET is a standout choice for general-purpose power management applications. Its maximum drain-source voltage of 100V and continuous drain current of 17A make it suitable for a diverse range of industrial and consumer electronic devices where high efficiency and low on-resistance are paramount. The DPAK package of this MOSFET not only ensures superior thermal performance but also facilitates easy mounting onto circuit boards. Additionally, the low on-resistance of 0.12 ohms plays a crucial role in efficient power handling and minimizing power loss in high-current applications. Furthermore, its design for high-speed switching makes it an ideal solution for applications requiring quick response times and precise control of power delivery. The low gate charge of 35nC further enhances its rapid switching capabilities and reduces switching losses, making the IRL530NSTRLPBF a reliable and efficient option for general-purpose power management applications

Key Features

High-side driver compatibility
Source to drain current sense
Suitable for DC-DC converters
Operating temperature range

Application

High power inverters
Solar panel controllers
Intelligent battery systems

Specifications

Series	HEXFET®	FET Type	N-Channel
Technology	MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	17A (Tc)	Drive Voltage (Max Rds On, Min Rds On)	4V, 10V
Rds On (Max) @ Id, Vgs	100mOhm @ 9A, 10V	Vgs(th) (Max) @ Id	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	34 nC @ 5 V	Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	800 pF @ 25 V	Power Dissipation (Max)	3.8W (Ta), 79W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)	Mounting Type	Surface Mount
Base Product Number	IRL530