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See Technical Specifications

IRL640SPBF +BOM

MOSFET N-Chan 200V 17 Amp

Manufacturer:

Vishay Siliconix
Mfr.Part #:

IRL640SPBF
Datasheet:

IRL640SPBF Datasheet (PDF)
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

200 V
Current - Continuous Drain (Id) @ 25°C:

17A (Tc)
EDA/CAD Models:

Request Free CAD Models for IRL640SPBF

IRL640SPBF General Description

The IRL640SPBF is a high-performance Power Field-Effect Transistor designed to deliver a maximum continuous drain current of 17A and withstand a voltage of 200V. With a low on-resistance of 0.18ohm and N-Channel configuration, this transistor offers efficient power management in electronic circuits. It is built with Silicon technology and features Metal-oxide Semiconductor FET for enhanced performance

Key Features

Digital fault detection and isolation
Real-time monitoring
High-performance operation

Application

Industrial
Power Management

Specifications

FET Type	N-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200 V	Current - Continuous Drain (Id) @ 25°C	17A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4V, 5V	Rds On (Max) @ Id, Vgs	180mOhm @ 10A, 5V
Vgs(th) (Max) @ Id	2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs	66 nC @ 5 V
Vgs (Max)	±10V	Input Capacitance (Ciss) (Max) @ Vds	1800 pF @ 25 V
Power Dissipation (Max)	3.1W (Ta), 125W (Tc)	Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Base Product Number	IRL640