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IRLB8748PBF +BOM

MOSFET Discrete Semiconductor Products - MOSFET N-CH 30V 78A TO-220AB - MOSFETs - Single

Manufacturer:

INFINEON
Mfr.Part #:

IRLB8748PBF
Datasheet:

IRLB8748PBF Datasheet (PDF)
Part Life Cycle Code:

Active
Reach Compliance Code:

compliant
ECCN Code:

EAR99
Factory Lead Time:

52 Weeks
EDA/CAD Models:

Request Free CAD Models for IRLB8748PBF

IRLB8748PBF General Description

In summary, the IRLB8748PBF power MOSFET transistor stands out for its impressive specifications and versatile applications. From its high-power capabilities to its efficient design, this transistor is a valuable component for any electrical circuit requiring reliable switching performance. Whether you're working on a motor control system or a power supply unit, the IRLB8748PBF is sure to meet your needs with its outstanding features and consistent operation

Key Features

Efficient voltage regulation provided
Low power consumption ensured
Improved efficiency and reliability
Suitable for high-reliability applications
Compact and reliable design
Fully compliant with industry regulations

Application

Medical equipment
Renewable energy systems
Wireless communication

Specifications

Source Content uid	IRLB8748PBF	Part Life Cycle Code	Active
Reach Compliance Code	compliant	ECCN Code	EAR99
Factory Lead Time	52 Weeks	Avalanche Energy Rating (Eas)	114 mJ
Case Connection	DRAIN	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	30 V	Drain Current-Max (ID)	78 A
Drain-source On Resistance-Max	0.0048 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code	TO-220AB	JESD-30 Code	R-PSFM-T3
Number of Elements	1	Number of Terminals	3
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	175 °C
Peak Reflow Temperature (Cel)	NOT SPECIFIED	Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	75 W	Pulsed Drain Current-Max (IDM)	370 A
Qualification Status	Not Qualified	Surface Mount	NO
Terminal Form	THROUGH-HOLE	Terminal Position	SINGLE
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED	Transistor Application	SWITCHING
Transistor Element Material	SILICON