This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

IRLHS6342TRPBF +BOM

The IRLHS6342TRPBF is a high-efficiency transistor designed for switching applications, featuring N-channel design with a 30V voltage tolerance and 8

Manufacturer:

Infineon Technologies
Mfr.Part #:

IRLHS6342TRPBF
Datasheet:

IRLHS6342TRPBF Datasheet (PDF)
Series:

HEXFET®
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

30 V
EDA/CAD Models:

Request Free CAD Models for IRLHS6342TRPBF

IRLHS6342TRPBF General Description

The IRLHS6342TRPBF power MOSFET stands out as a standout choice for high-efficiency power management applications. Its formidable combination of a 30V voltage rating, 28A continuous drain current, and low on-resistance of 2.1mΩ ensures optimal power transfer with minimal loss. Moreover, its low gate charge of 17nC results in swift switching speeds, meeting the demands of applications requiring rapid on/off switching

Specifications

Series	HEXFET®	FET Type	N-Channel
Technology	MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	8.7A (Ta), 19A (Tc)	Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Rds On (Max) @ Id, Vgs	15.5mOhm @ 8.5A, 4.5V	Vgs(th) (Max) @ Id	1.1V @ 10µA
Gate Charge (Qg) (Max) @ Vgs	11 nC @ 4.5 V	Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	1019 pF @ 25 V	Power Dissipation (Max)	2.1W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Base Product Number	IRLHS6342