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1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
TO-220-3Manufacturer:
Mfr.Part #:
IRLI2910PBF
Datasheet:
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
31A (Tc)
EDA/CAD Models:
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The IRLI2910PBF is a high-performance power MOSFET transistor from Infineon Technologies, designed for demanding high-speed switching applications in power supplies, motor control, and power management systems. With a 100V drain-source voltage rating, 42A continuous drain current, and low on-resistance of 30mΩ, this MOSFET delivers efficient power conversion with minimal conduction losses and fast switching times. Its advanced Power MOSFET technology ensures reliability and high performance, while the compact TO-220 package allows for easy mounting and effective heat sinking on circuit boards
FET Type | N-Channel | Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100 V | Current - Continuous Drain (Id) @ 25°C | 31A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V | Rds On (Max) @ Id, Vgs | 26mOhm @ 16A, 10V |
Vgs(th) (Max) @ Id | 2V @ 250µA | Gate Charge (Qg) (Max) @ Vgs | 140 nC @ 5 V |
Vgs (Max) | ±16V | Input Capacitance (Ciss) (Max) @ Vds | 3700 pF @ 25 V |
FET Feature | - | Power Dissipation (Max) | 63W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) | Mounting Type | Through Hole |
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Qty. | Unit Price | Ext. Price |
---|---|---|
1+ | $2.949 | $2.95 |
10+ | $2.580 | $25.80 |
30+ | $2.350 | $70.50 |
100+ | $2.115 | $211.50 |
500+ | $2.006 | $1,003.00 |
1000+ | $1.960 | $1,960.00 |
The prices below are for reference only.